Abstract
The relationship between fluctuation of oxygen concentration in Si crystals grown under the cusped magnetic field and Simelt flow during crystal growth is discussed. In the case of the center of cusped magnetic field benefited the melt surface, growth striation resulting from fluctuation of oxygen concentration appeared in the grown crystal. In this configuration, random temperature oscillation was also observed. This means that unstable melt flow is generated under the crystal/melt interface and this flow causes fluctuation of oxygen concentration in grown crystals.
