1999 年 26 巻 2 号 p. 3-
An in situ observation was carried out for investigating the interfacial phase formed at the B-doped Si melt/silica glass interface. It is found that the growth rate of the interfacial phase almost does not change when the boron concentration in the silicon melt is lower than 1x10^<19> atoms/cm^3, but it decreases considerably with increasing the boron concentration.