22aA4 高濃度B添加CZ-Si結晶成長(バルク成長I)
1999 年 26 巻 2 号 p. 5-
詳細
1999 年 26 巻 2 号 p. 5-
Heavily boron-doped silicon single crystal growth was studied by Czochralski method. The distribution coefficient of boron decreased with increasing the doped boron concentration of more than 10^<20> atoms/cm^3. Single crystal growth was limited by the cellular growth of constitutional supercooling.
