22pA4 融点近傍のシリコンの熱伝導度と分光放射率(バルク成長シンポジウム)
1999 年 26 巻 2 号 p. 15-
詳細
1999 年 26 巻 2 号 p. 15-
The thermal conductivity of silicon in solid and liquid states over the temperature range between 293 and l724 K has been measured by means of a non-stationary hot wire method. The hot wire was coated by silica-based ceramics film in order to avoid leak electric current. The spectral emissivity of silicon in solid and liquid states in the wave length between 650 and 2400μm at its melting point has been measured using a cold crucible furnace in order to avoid contamination on silicon surface by crucible materials.
