22pA6 シリコン単結晶の高温でのヤング率の測定と熱応力計算(バルク成長シンポジウム)
1999 年 26 巻 2 号 p. 17-
詳細
1999 年 26 巻 2 号 p. 17-
Young's modulus of silicon single crystal was measured in the range from room temperature to 1000℃. The modulus was calculated from the resonance frequencies in the flexural mode of vibration. Young's modulus in high temperature did not decrease so much as expected. The dependency of Boron concentration was also investigated and found to be very small in this temperature range.
