日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
22aB3 GaAs面上への水素吸着 : その場測定と量子化学計算(気相成長I)
松尾 有里子仁村 幹彦纐纈 明伯
著者情報
ジャーナル フリー

1999 年 26 巻 2 号 p. 21-

詳細
抄録

The hydrogen chemisorption on the surface is monitored by the surface photoabsorption method with a halogen transport ALE growth system. The AH, enthalpy change according to the hydrogen chemisorption, obtained by the in situ monitoring is +81.7 kJ/mol. The total energy change calculated by ab initio method is closed to the experimental results. The purpose of the present work is to monitor the hydrogen chemisorption on the (111)A Ga surface under an atmospheric pressure and to determine the atomic configuration on the surface by ab initio calculation.

著者関連情報
© 1999 日本結晶成長学会
前の記事 次の記事
feedback
Top