Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
22aB10 Growth of boron monophosphide thin film on Si(100) surface
Suzuka Nishimura, Kazutaka Terashima
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1999 Volume 26 Issue 2 Pages 29-

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Abstract
The growth of BP on Si substrates has been carried out. We have successfully grown BP epitaxial layer on Si (100) substrates with 10×10mm^2 area with adding thin low temperature growth layer. The growth of BP on Si will be discussed.
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© 1999 The Japanese Association for Crystal Growth
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