Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
23aB5 Coalescence and dislocation introduction in the lateral growth of MicroChannel Epitaxy
Z. YanS NaritsukaT Nishinaga
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1999 Volume 26 Issue 2 Pages 90-

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Abstract
The process of the lateral coalescence in the MCE of InP by LPE was studied. We suggest two modes of the lateral coalescence: the "one-zipper" and the "two-zipper" growth. Dislocations are usually found in the coalescent region when the growth is in the "two-zipper" mode, however, when the growth changes to the "one-zipper" mode, even the coalescent region becomes dislocation-free.
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© 1999 The Japanese Association for Crystal Growth
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