23aB8 Investigation of formation of the InGaAs bridge layer on Patterned GaAs Substrates

Abstract

In order to investigate the formation mechanism of the bridge, InGaAs layer were grown on line-seed substrate alined with <110>. When InGaAs grew laterally with {111} B plane appeared at growth front, InGaAs formed a bridge. This results indicated that Berg effect greatly affected on the formation mechanism of the bridge.