Abstract
GaN were grown by blowing NH_3 gas bubbles onto a substrate that suspended in Ga melt at 95℃ for 4.5h under atmospheric pressure. In the case of growth directly on a sapphire substrate, grown crystals show columnar shapes. On the other hand, GaN epitaxial layer of 2 - 3μm is grown on a GaN substrate that is preformed on a sapphire by MOVPE.
