不均一水平磁場印加下におけるシリコン融液中の酸素の輸送現象 : バルク成長II

抄録

Mechanism of oxygen-incorporation into silicon single crystals from the melt under inhomogeneous magnetic fields was discussed using three-dimensional time-dependent calculation. Distribution of magnetic field is calculated from Biot-Savart's eq. by taking into account finite diameter of solenoids. Distributions of electric potential and oxygen concentration were modified by the inhomogeneous distribution of the magnetic fields.