垂直型MOCVD反応器におけるGaN薄膜の成膜速度分布の実験とシミュレーションによる検討 : バルク成長シンポジウム
2000 年 27 巻 1 号 p. 19-
詳細
2000 年 27 巻 1 号 p. 19-
The effects of operation conditions of a vertical MOCVD reactor for GaN thin film preparation are studied. Numerical simulation results reproduce well the measured change of growth rate distribution with pressure and flow rate. The change of growth rate distribution is found to be caused by a change in flow pattern in the reactor which affects GaN precursor concentration distribution above the substrate.
