強磁場がGaPのLPE成長過程に及ぼす影響 : エピタキシャル成長IV
2000 年 27 巻 1 号 p. 40-
詳細
2000 年 27 巻 1 号 p. 40-
In this research, the morphological changes during GaP LPE growth of the S/L interface were observed under strong static magnetic field using near-infrared microscopic interferometer. We discussed the damping effect of convection on the surface morphology during dissolution and growth.
