GaN系結晶のバルクおよびエピタキシャル成長 : 化合物半導体結晶(<特集>21世紀を拓く薄膜結晶成長)

抄録

Growth of bulk and heteroepitaxial gallium nitride and related materials are reviewed. The status of a bulk growth both by high pressure and high temperature growth method and so-called sublimation is described. Both methods are not capable of growing large enough crystals to be used as a homoepitaxial substrate. The effects of dislocation on optical and structural properties are described. Recent new methods to reduce dislocation density in GaN are introduced. These new techniques can provide a large area alternatives of a bulk GaN for homoepitaxial substrate.