日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
レーザー励起物理的気相成長による単一粒径シリコンナノ結晶の創製(<小特集>ナノ結晶)
吉田 岳人鈴木 信靖牧野 俊晴山田 由佳瀬戸 章文
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2001 年 28 巻 3 号 p. 137-144

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We report silicon (Si) nanoparticles prepared by pulsed laser ablation in constant pressure inert background gas (PLA-IBG) . Size distribution of the Si nanoparticles depended on the inert background gas pressure. The relation between the average size and the background gas pressure, can be explained by an inertia fluid model. Crystallinity of the nanoparticles was crystalline similar to that of bulk Si.Furthermore, we demonstrate the synthesis of mono-dispersed, nonagglomerated Si nanocrystallites, using a novel integrated process system where a classification unit of a low-pressure-operating differential mobility analyzer (LP-DMA) was combined to the PLA-IBG unit. The LP-DMA has been designed to operate under pressures less than 5.0Torr. We have successfully synthesized and deposited the nonagglomerated Si nanocrystallites of 3.7 nm mean diameter and 1.2 geometrical standard deviation.

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© 2001 日本結晶成長学会
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