SiC表面における高配向カーボンナノチューブ薄膜形成(<小特集>ナノ結晶)
2001 年 28 巻 3 号 p. 152-157
詳細
2001 年 28 巻 3 号 p. 152-157
A simple method of producing aligned carbon nanotube (CNT) films and a mechanism for their formation are described. The CNT film is self-organized by surface decomposition of SiC heated in a vacuum at a temperature between 1500℃ to 1700℃. It was found that the length of CNTS was controlled with adjusting heating time and temperature. Formation of the CNT films depends on the surface orientation of SiC crystal. Especially on C(0001^^-) face, an aligned CNT film O.25 Pm in thickness was formed perpendicular to the surface after heating at 1700℃ for half an hour. On the contrary, a very thin layer of graphite sheets 5 nm in thickness parallel to the surface was formed on the Si face under the same condition. To clarify the formation tmechanism of the CNTs, the initial stage of the surface decomposition of SiC was investigated by high-resolution electron microscopy along the cross-sectional direction. As the results, an initial-nanocap mechanism was proposed.
