2001 年 28 巻 3 号 p. 164-173
New-type nanostructures of organic molecules and inorganic semiconductors have been successfully fabricated on 'inactive' substrate surfaces such as layered material surfaces and dangling-bond terminated semiconductor surfaces. In this article we introduce two examples of our methods. One is the fabrication of C_<60> molecular nanostructures on a GaSe/MoS2 heterostructure substrate by the selective growth method. The other is the fabrication of self-organized compound semiconductor quantum dots on a bilayer-GaSe terminated Si(111) substrate. The use of the inactive substrate surfaces opens a new way to fabricate position-controlled nanostructures, which have been difficult to form by conventional self-organization methods.