日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
CZ-Si結晶成長における高濃度B添加種子/低濃度B添加成長結晶界面のミスフィット転位の抑制機構 : バルク成長シンポジウム
太子 敏則王 鉄峰黄 新明干川 圭吾
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2002 年 29 巻 2 号 p. 16-

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Dislocations due to lattice misfit suppressed at the interface of heavily B-doped Si seed and lightly B-doped Si crystal in CZ-Si crystal growth when the difference in B concentration in the seed and grown crystal was less than 7×10^<18> atoms/cm^3, corresponding to lattice constant of 2×10-<-4>Å The gradual B concentration distribution was formed at the interface by thermal diffusion of B atoms from the heavily B-doped Si seed during the crystal growth, and the relationship between the distribution and the formation of dislocations due to lattice misfi was investigated.

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© 2002 日本結晶成長学会
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