GaAs/AlAsヘテロ構造におけるAlAs層の横方向酸化に関する研究 : エピキタシャル成長I
2002 年 29 巻 2 号 p. 23-
詳細
2002 年 29 巻 2 号 p. 23-
We found that the lateral oxidation of GaAS/AlAS hetero structures with a Be-doped GaAs layer depended on the amount of Be doping. Be doping increased the oxidation rate over that of undoped layers, and the rate increased with an increase of Be doping. Qualitatively, the results indicated that oxygen ions transport through the through oxidation layer and electrons transport through the GaAs layer.
