日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
RF-MBE法によるバルクGaN単結晶N面上へのGa極性GaN薄膜の成長 : エピキタシャル成長II
久保 秀一岩田 史郎小西 将史倉井 聡田口 常正
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2002 年 29 巻 2 号 p. 29-

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The growth of GaN epilayers on the N-face of pressure-controlled solution growth (PC-SG) bulk GaN single crystals has been performed by RF-MBE. As a result, it is found that GaN epilayers grown on the N-face using In-doped GaN buffer layers have Ga-polarity. This result suggests that In-doping has the role of reversing the polarity of the GaN epilayers from N- to Ga-polarity.

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© 2002 日本結晶成長学会
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