日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
RF-MBE成長したInN/(0001)Sapphireの極微構造観察 : エピキタシャル成長II
荒木 努山口 智広斎藤 義樹名西 〓之
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2002 年 29 巻 2 号 p. 30-

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Microstructure of InN films grown on (0001) sapphire substrates by RF-MBE was observed using transmission electron microscopy. It was confirmed that InN grown directly on sapphire had mainly two types of epitaxial relationship with sapphire. On the other hand, InN grown with nitridation was found to have one epitaxial relationship, but showed grain structure with c-axis orientation distribution at initial growth stage.

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© 2002 日本結晶成長学会
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