We have fabricated Er,O-codoped GaAs/GanP double-heterostructure(DH) light-emitting diodes(LEDs) grown by organometallic vapor phase epitaxy and investigated their optical properties. Under forward bias, the LEDs exhibited radiant Er-related electroluminescence(EL) at around 1.54μm at room temperature. The spectrum was identical to the photoluminescence(PL) spectrum due to an Er-O center. This indicates that the Er-2O center is excited effectively by current injection.
