Si(001)微斜面上の吸着原子の流れによるステップバンチング : 結晶成長理論シンポジウム

抄録

We study step bunching induced by drift flow of adatoms. With alternation of anisotropic diffusion coefficient like a Si(001) vicinal face, the step bunching occurs irrespective of the drift direction. When we neglect evaporation of adatoms, step bunching with step-down drift is faster than that with step-up drift. With increasing the evaporation, the difference of growth rate becomes small.