完全結晶の成長(第33回結晶成長国内会議特別講演会)
2004 年 30 巻 5 号 p. 408-416
詳細
2004 年 30 巻 5 号 p. 408-416
Aspects of perfect crystal growth in semiconductors are reviewed. This article contains our successful results on vapor phase epitaxy including photo epitaxy and epitaxy in UHV (molecular layer epitaxy). It is shown that the chemical reaction and kinematical aspects are important for the achievement of perfect crystal growth. Stoichiometry control issues in compound semiconductors are also shown in bulk crystal growth and LPE.
