25pB07 SiGe多層構造歪緩和バッファ作製技術と室温動作Si/SiGe系RTD(半導体エピ(3),第34回結晶成長国内会議)

抄録

We experimentally clarified the relief mechanism of a double-layer structure buffer. Furthermore, we proposed the triple-layer structure buffer containing an ultra-thin high Ge composition layer. And the high PVCR of 〜50000 has been obtained at room temperature and it has been suggested that the triple-layer buffer has better crystalline quality.