2005 年 32 巻 3 号 p. 114-
Phosphorous-doped CuInS_2 bulk crystals were grown by the temperature difference method under controlled S vapor pressure. InP was used as a p-type dopant. Grown crystals showed p-type conductivity in S-poor alloy composition region. We report some electrical properties, mobility and carrier concentration, and PL spectra of P-doped CuInS_2.