17aB01 GaAs MCEにおける横方向成長層の"浮き上がり"に関する研究(半導体エピ(1),第35回結晶成長国内会議)

抄録

In micro channel epitaxy (MCE) it is sometimes observed a "lift up" phenomenon of the laterally grown layer, which grows separately from the substrate. The "lift up" is inconvenient for the device use of the layer because it makes the layer unstable and fragile. We studied its cause by changing the separation of the aperture for the microchannel in the mask. Consequently, it was found that Berg effect is related to the "lift up" and that controlling the supersaturation in the growth is very important to suppress it.