17aB04 InGaPN液相エピタキシャル成長(半導体エピ(1),第35回結晶成長国内会議)
2005 年 32 巻 3 号 p. 131-
詳細
2005 年 32 巻 3 号 p. 131-
InGaPN layers were formed on InP substrates by using LPE method at the constant growth temperature of 400-600℃. Cross-hatched patterns from the misfit dislocation were observed on InGaPN surface. In the sample grown at 400℃, P_2N cluster ion was detected by SIMS measurement. The possibility for LPE of nitride-semiconductor InGaPN layer was confirmed.
