2005 年 32 巻 3 号 p. 141-
Hydride vapor phase epitaxy (HVPE) of AlN has been performed using AlCl_3 precursor, which is generated by the reaction between metallic Al and HCl. If high-grade AlCl_3 powder can be obtained, a new HVPE of AlN with mass production potential is possible. We found that high quality layers of AlN were grown using the solid AlCl_3 source.