17pB10 BP/Si(001)上への立方晶GaNRF-MBE成長(半導体エピ(4),第35回結晶成長国内会議)
2005 年 32 巻 3 号 p. 149-
詳細
2005 年 32 巻 3 号 p. 149-
Growth of cubic GaN was performed on MOCVD grown BP/Si(001) substrates using RF-MBE. Surface RHEED reconstruction patterns of (2x2) and (4x1) were observed under Ga rich and stoichiometric conditions, respectively. The purity of c-GaN was 98% which was measured from the ratio of integrated intensity of (002)c and (1-101)h XRD peaks.
