01pA02 FZ法による(Ti_<1-x>Zr_x)C単結晶の育成(機能性結晶(1),第36回結晶成長国内会議)
2006 年 33 巻 4 号 p. 192-
詳細
2006 年 33 巻 4 号 p. 192-
(Ti_<1-x>Zr_x)C crystals were prepared by the floating zone method, x<0.4. Subgrain boundaries were removed by adding more than several mol% of ZrC. The group-III nitrides, GaN and AlN, were epitaxially grown on the (111) planes of the (Ti,Zr)C crystals by AP-MBE method.
