日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
01aB06 低温成長バッファー層を用いたZnO基板上無極性GaN薄膜の成長(半導体エピ(1),第36回結晶成長国内会議)
小林 篤太田 実雄藤岡 洋
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2006 年 33 巻 4 号 p. 202-

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ZnO has been regarded as one of the most promising substrates for nonpolar GaN films because ZnO and GaN perfectly share the same crystalline symmetries and the lattice mismatches between them are as small as 1.9% and 0.4% for the a and c axes, respectively. We discuss the epitaxial growth of high-quality nonpolar GaN on nearly lattice matched a- and m-plane ZnO with the use of low temperature buffer layers which helps to suppress the inter facial reactions between GaN and ZnO.

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© 2006 日本結晶成長学会
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