2006 年 33 巻 4 号 p. 205-
Growth of very high-quality nonpolar 4H-AlN (1120) on 4H-SiC (1120) substrate is presented. A reduction of defects such as stacking faults and threading dislocations was achieved by isopolytypical and coherent growth. Transmission electron microscopy revealed the stacking fault density to be 2×10^5cm^<-1>, and the partial and perfect threading dislocation density to be 7×10^7cm^<-2> and 1×10^7cm^<-2>, respectively.