日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
01aB11 GaN/GaN(001)における成長初期過程の理論検討(半導体エピ(2),第36回結晶成長国内会議)
寒川 義裕松尾 有里子秋山 亨伊藤 智徳白石 賢二柿本 浩一
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2006 年 33 巻 4 号 p. 207-

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We carried out theoretical analyses based on the ab initio calculations incorporates free energy of vapor phase in order to find the initial growth process of cubic GaN in GaN(001)-(4x1). The results suggest that N attached structure appears at the initial growth stage, and then Ga adsorbs on the N attached GaN(001)-(4x1) surface. Considering these process, we performed Monte Carlo simulations. The results imply that maximum point of Ga coverage after 1/32 monolayer supply shifted toward Ga-rich condition from V/III=1.0.

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© 2006 日本結晶成長学会
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