2006 年 33 巻 4 号 p. 207-
We carried out theoretical analyses based on the ab initio calculations incorporates free energy of vapor phase in order to find the initial growth process of cubic GaN in GaN(001)-(4x1). The results suggest that N attached structure appears at the initial growth stage, and then Ga adsorbs on the N attached GaN(001)-(4x1) surface. Considering these process, we performed Monte Carlo simulations. The results imply that maximum point of Ga coverage after 1/32 monolayer supply shifted toward Ga-rich condition from V/III=1.0.