日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
化合物半導体TlBr結晶を用いたガンマ線検出器(<特集>次世代先進センサーを拓く単結晶材料)
人見 啓太朗石井 慶造
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ジャーナル フリー

2013 年 40 巻 3 号 p. 163-166

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Thallium bromide (TlBr) is a compound semiconductor attractive for fabrication of gamma-ray detectors. TlBr exhibits very high photon stopping power originating from its high atomic numbers (Ti: 81, Br: 35) and high density (7.56g/cm^3). Capacitive Frisch grid detectors and pixelated detectors were fabricated from TlBr crystals grown by the traveling molten zone method. The capacitive Frisch grid detectors exhibited an energy resolution of 1.7% FWHM for 662keV gamma-rays at -20℃. An energy resolution of 1.2% FWHM for 662keV was obtained from a pixelated anode of a TlBr detector operating at room temperature.

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© 2013 日本結晶成長学会
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