2013 年 40 巻 3 号 p. 163-166
Thallium bromide (TlBr) is a compound semiconductor attractive for fabrication of gamma-ray detectors. TlBr exhibits very high photon stopping power originating from its high atomic numbers (Ti: 81, Br: 35) and high density (7.56g/cm^3). Capacitive Frisch grid detectors and pixelated detectors were fabricated from TlBr crystals grown by the traveling molten zone method. The capacitive Frisch grid detectors exhibited an energy resolution of 1.7% FWHM for 662keV gamma-rays at -20℃. An energy resolution of 1.2% FWHM for 662keV was obtained from a pixelated anode of a TlBr detector operating at room temperature.