日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
III-V族化合物半導体ナノワイヤ太陽電池(<特集>ナノ・ヘテロ構造を利用した太陽電池)
福井 孝志吉村 正利中井 栄治冨岡 克広
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2014 年 41 巻 2 号 p. 81-86

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Semiconductor nanowires (NWs) are promising candidate for light-absorbing material in next generation photovoltaic which can reduce cost and materials consumption compared to planar devices. Furthermore, III-V NW-based multi-heterojunction solar cells using lattice-mismatched material system are expected as high energy-conversion efficiencies under concentrated light. Here, we report on III-V compound semiconductor nanowire solar cells. After brief introduction of crystal growth of semiconductor nanowires, we discuss on optical properties and device performance of nanowire solar cells compared to planer ones. Next we review on current research on nanowire solar cells. Finally we discuss future prospects, especially how to reduce cost and materials consumption.

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© 2014 日本結晶成長学会
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