日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
InAs-GaAs(001)表面再構成における組成ゆらぎと量子ドットの非古典的核形成(<特集>半導体結晶成長機構のその場観察)
小西 智也Gavin R. Bell塚本 史郎
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2015 年 42 巻 3 号 p. 174-179

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The growth of InAs quantum dots on GaAs(001) shows a new aspect of non-classical nucleation, namely the dynamic formation of preferred growth sites within the substrate. Using fully in situ scanning tunnelling microscopy - molecular beam epitaxy, we observe rapidly changing transitions between domains of different surface reconstruction a few nm in size. Nucleation of 3D islands is preferred on one particular reconstruction, blurring the line between heterogeneous and homogeneous nucleation as traditionally understood on a static substrate.

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© 2015 日本結晶成長学会
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