日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
解説
窒化物半導体MOVPEの熱力学解析 ~面方位依存性~
寒川 義裕草場 彰白石 賢二柿本 浩一纐纈 明伯
著者情報
ジャーナル フリー

2016 年 43 巻 4 号 p. 233-238

詳細
抄録

  It is known that the growth process of semiconductors depends on the growth conditions such as temperature, partial pressures of gaseous sources, and growth orientation. However, there has been little study of the relation between the growth process and the growth conditions. In 2001, we developed an ab initio based-approach that incorporates gas-phase free energy. Using the theoretical approach, we can discuss the influence of the growth conditions on the stability of surface reconstruction. In this research, we propose a newly improved thermodynamic analysis that incorporates surface energies obtained by ab initio calculations. The theoretical approach was applied to study the growth processes of InN(0001), (000-1), (10-10) and (11-20) by MOVPE. Calculation results reproduced the difference in optimum growth temperature.

著者関連情報
© 2016 日本結晶成長学会
前の記事 次の記事
feedback
Top