When the author was a master’s course student, she experienced a failure in molecular beam epitaxial (MBE) growth of one of the dilute bismide (Bi-) III-V compound semiconductors, GaAs1-xBix. This failure was caused by her cutting corners when she cleaned the surface of the substrate by chemical etching before MBE growth. However, this experience later led to the realization of the first laser oscillation of GaAs1-xBix. The failures leading to the success in MBE growth of GaAs1-xBix are introduced in this manuscript to discuss what the crystals of GaAs1-xBix have taught the author through her experience.