日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
解説
多元系化合物半導体の結晶成長の難しさと面白さ
西永 慈郎
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ジャーナル 認証あり

2024 年 51 巻 3 号 論文ID: 51-3-03

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  Polycrystalline Cu(In,Ga)Se2 (poly-CIGS) solar cells are widely studied for their application in thin-film photovoltaics. Single-crystalline CIGS solar cells can potentially address the issues of poly-CIGS solar cells, and we fabricated epitaxial CIGS (epi-CIGS) layers on GaAs substrates using techniques developed for high-efficiency poly-CIGS solar cells such as Ga grading, Na doping, and heat-light soaking. Scanning transmission electron microscopy was used to compare the structural characteristics of poly-CIGS and epi-CIGS solar cells with conversion efficiencies of more than 21%. Both types of solar cells had similar Ga gradient profiles. These observations suggest that grain boundaries in poly-CIGS layers are not the main factor limiting the conversion efficiency of poly-CIGS solar cells.

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