Temperature dependences of thermoelectric properties of bulk SiGeAu composites

Abstract

Recently, we have demonstrated thermoelectric power factor enhancement of bulk SiGeAu composites at room temperature by thermal management with resonant level effect. In terms of the application to the thermoelectric generation from low temperature wasted heat, the thermoelectric properties in the low temperature range should be investigated. In this study, we evaluate the temperature dependences of thermoelectric properties of P- and B-doped SiGeAu samples. Accompanying the thermoelectric power factor enhancement of P-doped SiGeAu sample by thermal management with resonant level effect, ZT was higher than practically-used SiGe in the range from room temperature to 200 ºC. This study indicates that SiGeAu composites can be used for reusing low temperature wasted heat.