レーザによる微小内部亀裂連鎖に基づく半導体結晶材料の高品位切断加工

抄録

We propose a new high precision, high quality laser cutting process for semiconductor substrates such as Si, SiC and diamond. According to this method, micro cracks are introduced inside the material by appropriate focusing of the laser beam. A scanning laser beam, then, connects the cracks so as to realize three dimensional cutting. In this paper, we focus on the effects of laser energy, laser pitch and spherical aberration on the shape of the micro cracks. High quality laser cutting is achieved by forming minute and uniform cracks regardless of the crystal orientation and heating produced. In order to ascertain the three dimensional cutting process, cutting out with round chamfering is realized.