精密工学会誌
Online ISSN : 1882-675X
Print ISSN : 0912-0289
ISSN-L : 0912-0289
LSIのオンチップ配線修正システムにおける集束イオンビーム加工技術の開発
伊藤 文和嶋瀬 朗原市 聡高橋 貴彦
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1992 年 58 巻 7 号 p. 1161-1166

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During debugging logic LSIs, a period to reproduce LSI in order to change the logic design is becoming longer. To reduce the period from several weeks down to one day, an on-chip direct wiring modification system, using the focused ion beam (FIB) milling and the laser CVD, has been developed.
This paper describes a precise FIB milling technique for cutting the wirings and making the via holes to the wirings of the LSI. Milling depth control by monitoring the ion induced photo-emissions and the milling strategy to overcome the surface steps of the LSI resulted in the milling depth accuracy of ±0.25μm. The system, consist of the FIB milling described in this paper and the laser CVD, has been applied to the logic modification of the LSIs of Hitachi M880 mainframe computer. Several tens of cuts, vias on an LSI chip were made by FIB, and the several jumper wirings were made by laser CVD. The average yield of modified LSI chips of 91.8% was achieved.

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