Aluminum nitride (AIN) is expected of useful electronic material because of properties of high temperature stability, chemical stability, high thermal conductivity, high sound velocity and so on. For purposes of fabrication and control of film crystallinity and orientation at low temperature, AIN film was prepared by dual ion beam deposition method. It was found that the bombardment of nitrogen ions was very important for reaction between aluminum and nitrogen, inc.1 that a good oriented AIN film could be formed at room temperature by the precision control of the bombardment of low nitrogen ion energy (100 eV). For stoichiometric AIN, the c-axis orientation depends on the nitrogen ion beam current density and becomes better with the increase of nitrogen ion beam current density. The c-axis orientation of AIN film by this method was independent of the kind of substrates and temperature.
