InGaAs/GaAs strained-layer single quantum well (SSQW) structures have been grown at temperatures from 200 to 540°C by migration enhanced epitaxy (MEE). Fabricated structures were characterized by comparing the measured wavelength of photoluminescence (PL) emission peak with the theoretically calculated one for ideal quantum wells. In the SSQWs made at high temperatures (400 - 540°C), large PL peak shifts to the shorter wavelengths than the calculated ones were observed. This blue shift of the PL peak was attributed to the surface segregation and desorption of In atoms. Lowering the growth temperature of MEE below 300°C, the In segregation was suppressed and the designed PL wavelength from the SSQW was obtained. It was shown that the preparation of GaAs (2 × 4) -As surface without excess Assticking and the long migration time of group III atoms were needed to obtain the high PL intensity from SSQW.
