1997 年 63 巻 7 号 p. 997-1001
When a thin film on a substrate, or a multilayer thin film is irradiated by an ion beam, surface, interface, and the films undergo extensive changes as a result of ion beam induced mixing phenomena. The aim of this study is to use high energy ion beam mixing at the interface between a multilayer and substrate, and to investigate the parameters which can be used to control the mixing profile and the width of mixing layers. Au (30nm) - C (400nm) -Au (30nm) multilayers were deposited on Si and C substrates. These samples were irradiated by 1.5 and 2.0MeV Ni+ and Ag+ ion beams, and irradiation doses were 5.0 × 1015, 1.0 × 1016, 1.7 × 1016 and 2.0 × 1016ion/cm2. RBS was used to investigate the interfacial mixing profiles. A tandem type accelerator was used for high energy ion irradiation and the RBS measurements. The relation between ballistic effect such as collisional cascade, thermodynamic effect (thermal spike) for high energy ion beam mixing, sputtering effect caused by ion beam irradiation was also investigated. From these results, it is concluded that ion beam mixing caused by atomic migration depends on irradiation dose and energy as well as irradiation ion and substrate constituent atom's chemical properties.