抄録
The thermal stress cleaving of silicon wafer with a laser beam is a prospective technique, which supersedes the mechanical dicing. This method makes it possible to cut a wafer at very high production rate in comparison with the diamond thin blade wheel and to protect the wafer from the contamination of cutting coolant and chips. In this paper, the cleaving mechanism of silicon wafer irradiated with the pulsed Nd:YAG laser is investigated. The temperature at the area irradiated with laser is measured using two-color pyrometer with an optical fiber. The acoustic emission is also measured to examine the mechanism of the crack propagation. In the process, the temperature at the area irradiated with laser should be controlled in order to reduce the thermal damages and to improve the cleaving accuracy.
