LnNiO_3-z(Ln=La, Pr)及びLaCuO_3-zの酸素欠損と電気伝導

抄録

We report the preparation, structure and electrical properties of LaNiO_3-z, PrNiO₂3-z and LaCuO_3-x. Wide range of oxygen deficiency was realized by changing the synthetic oxygen pressure. These systems show metallic conductivity even for the samples having a large amount of oxygen vacancy (Z<0.25). The Seebeck coefficient measurement showed that the dominant carrier in LnNiO_3-z system is electron, while hole carrier is dominant in LaCuO_3-z system.