低保磁力Co-Crスパッタ膜の磁区パターン

抄録

Co-Cr films were prepared on polyimide substrates with a temperature of T_s=27°C by rf sputtering method. Film thickness was varied from 0.2μ to 2μm. These films have low coercivity. When the c-axis orientation was good, the reentrant perpendicular hysteresis loops could be obtained. In these films, we observed domain patterns as a function of the thickness h and the c-axis orientation Δθ₅₀ by the Bitter method. The stripe domain and wall motion could be observed clearly in thick films with good c-axis orientation. The relations between the period of stripe domain D and h could be explained by wall motion. The dependence of h and Δθ₅₀ on the squareness ratio of in-plane hysteresis loop M_r(//)/M_s was studied. We calculated M_r(//)/M_s versus Δθ₅₀ and h based on a model assuming the μ* effect. Good agreement between the exprimental and calculated values was obtained.