Perpendicular GMR Random Access Memory Using Magnetic Tunneling Effect

抄録

  Results obtained on current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) effect show low-field magnetoresistance change ratio as high as 30%, superior to conventional current-in-plane (CIP) GMR effect. A storage mechanism in CPP GMR artificial lattice is also found, similar to that in CIP structure. Based on this storage mechanism, we designed an advanced perpendicular GMR random access memory (RAM). These CPP GMR elements provide an excellent means of storing information as a remanent magnetization on the hard components with high density, whereas low impedance output drivers offer extremely high signal-to-noise ratio (SNR) readout signal at low power, by suppressing such as Johnson noise from normal metal. In other words, it is expected of that the problem of low SNR of signal, existing in magnetoresistance random access memory for a long term, will be solved by our scheme.